Interconnect substrate, semiconductor device, methods of manufacturing the same, circuit board, and electronic equipment

ABSTRACT

A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.

CROSS-REFERENCE

This is a Divisional of application Ser. No. 11/279,078 filed on Apr. 7,2006, which is a divisional of application Ser. No. 10/624,680 filed onJul. 23, 2003. The entirety of the prior applications which isincorporated herein by reference. In addition, priority is claimed fromJapanese Patent Application No. 2002-213606 filed on Jul. 23, 2002,which is hereby incorporated by reference in its entirety.

BACKGROUND

The present invention relates to an interconnect substrate, asemiconductor device, methods of manufacturing the same, a circuitboard, and electronic equipment.

A multilayer substrate has been used in the case where a high-densityinterconnect structure is necessary. For example, a multilayer substratehas been used as an interposer in a package capable of high densitymounting such as ball grid array (BGA) and chip scale/size package(CSP). As a conventional method of manufacturing a multilayer substrate,there is known a method of stacking substrates having an interconnectpattern formed by etching copper foil, and electrically connecting theupper and lower interconnect patterns by forming via holes in thesubstrates and filling or plating the via holes with a conductivematerial.

According to the conventional method, since a photolithographic stepmust be performed for etching, a mask is necessary. The mask isexpensive. Moreover, since the via holes must be formed larger forfilling or plating the via holes with a conductive material, an increasein density of the interconnect structure is prevented. In the case offorming through holes by plating the via holes, since a space is formedinside the through holes, moisture removal must be taken intoconsideration. In the case of mechanically forming the via holes afterstacking three or more substrates, the via holes cannot be formed in thesubstrate in the intermediate layer.

SUMMARY

A method of manufacturing an interconnect substrate according to oneaspect of the present invention comprises:

-   -   forming a first conductive layer;    -   forming an insulating layer so that at least a part of the        insulating layer is disposed on the first conductive layer; and    -   forming a second conductive layer so that at least a part of the        second conductive layer is disposed on the insulating layer over        the first conductive layer,    -   wherein each of the first and second conductive layers is formed        by discharging drops of a solvent containing fine particles of a        conductive material, and    -   wherein the insulating layer is formed by discharging drops of a        solvent containing fine particles of an insulating material.

A method of manufacturing a semiconductor device according to anotheraspect of the present invention comprises:

-   -   manufacturing an interconnect substrate; and    -   mounting a semiconductor chip on the interconnect substrate,    -   the manufacturing of an interconnect substrate including:    -   forming a first conductive layer;    -   forming an insulating layer so that at least a part of the        insulating layer is disposed on the first conductive layer; and    -   forming a second conductive layer so that at least a part of the        second conductive layer is disposed on the insulating layer over        the first conductive layer,    -   wherein each of the first and second conductive layers is formed        by discharging drops of a solvent containing fine particles of a        conductive material, and    -   wherein the insulating layer is formed by discharging drops of a        solvent containing fine particles of an insulating material.

A method of manufacturing a semiconductor device according to a furtheraspect of the present invention comprises:

-   -   mounting a semiconductor chip over a substrate with a surface of        the semiconductor chip on which an electrode is formed facing        upward;    -   forming a first conductive layer over the substrate and the        semiconductor chip so that the first conductive layer is        electrically connected with the electrode of the semiconductor        chip;    -   forming an insulating layer so that at least a part of the        insulating layer is disposed on the first conductive layer; and    -   forming a second conductive layer so that at least a part of the        second conductive layer is disposed on the insulating layer over        the first conductive layer,    -   wherein each of the first and second conductive layers is formed        by discharging drops of a solvent containing fine particles of a        conductive material, and    -   wherein the insulating layer is formed by discharging drops of a        solvent containing fine particles of an insulating material.

A method of manufacturing a semiconductor device according to stillanother aspect of the present invention comprises:

-   -   mounting a semiconductor chip over a first substrate with a        surface of the semiconductor chip on which an electrode is        formed facing upward;    -   attaching a second substrate to the first substrate, the second        substrate having a shape which avoids the semiconductor chip;    -   forming a first conductive layer over the second substrate and        the semiconductor chip so that the first conductive layer is        electrically connected with the electrode of the semiconductor        chip;    -   forming an insulating layer so that at least a part of the        insulating layer is disposed on the first conductive layer; and    -   forming a second conductive layer so that at least a part of the        second conductive layer is disposed on the insulating layer over        the first conductive layer,    -   wherein each of the first and second conductive layers is formed        by discharging drops of a solvent containing fine particles of a        conductive material, and    -   wherein the insulating layer is formed by discharging drops of a        solvent containing fine particles of an insulating material.

A method of manufacturing a semiconductor device according to a stillfurther aspect of the present invention comprises:

-   -   forming a first conductive layer over a semiconductor wafer on        which a plurality of integrated circuits are formed so that the        first conductive layer is electrically connected with electrodes        of the semiconductor wafer;    -   forming an insulating layer so that at least a part of the        insulating layer is disposed on the first conductive layer;    -   forming a second conductive layer so that at least a part of the        second conductive layer is disposed on the insulating layer over        the first conductive layer; and    -   cutting the semiconductor wafer,    -   wherein each of the first and second conductive layers is formed        by discharging drops of a solvent containing fine particles of a        conductive material, and    -   wherein the insulating layer is formed by discharging drops of a        solvent containing fine particles of an insulating material.

An interconnect substrate according to yet another aspect of the presentinvention is manufactured by any of the above methods.

A semiconductor device according to a yet further aspect of the presentinvention is manufactured by any the above methods.

A semiconductor device according to a yet further aspect of the presentinvention comprises:

-   -   a substrate including a depression section;    -   a first conductive layer formed to pass through the depression        section;    -   an insulating layer, at least a part of the insulating layer        being disposed on the first conductive layer;    -   a second conductive layer, at least a part of the second        conductive layer being disposed on the insulating layer over the        first conductive layer; and    -   a semiconductor chip mounted in the depression section.

A semiconductor device according to a yet further aspect of the presentinvention comprises:

-   -   a substrate including a depression section;    -   a semiconductor chip mounted in the depression section of the        substrate with a surface of the semiconductor chip on which an        electrode is formed facing upward;    -   a first conductive layer formed over the substrate and the        semiconductor chip so that the first conductive layer is        electrically connected with the electrode of the semiconductor        chip;    -   an insulating layer, at least a part of the insulating layer        being disposed on the first conductive layer; and    -   a second conductive layer, at least a part of the second        conductive layer being disposed on the insulating layer over the        first conductive layer.

A semiconductor device according to a yet further aspect of the presentinvention comprises:

-   -   a first substrate;    -   a semiconductor chip mounted over the first substrate with a        surface of the semiconductor chip on which an electrode is        formed facing upward;    -   a second substrate having a shape which avoids the semiconductor        chip and being attached to the first substrate;    -   a first conductive layer which is formed over the second        substrate and the semiconductor chip so that the first        conductive layer is electrically connected with the electrode of        the semiconductor chip;    -   an insulating layer, at least a part of the insulating layer        being disposed on the first conductive layer; and    -   a second conductive layer, at least a part of the second        conductive layer being disposed on the insulating layer over the        first conductive layer.

A circuit board according to a yet further aspect of the presentinvention is equipped with any of the above semiconductor devices.

Electronic equipment according to a yet further aspect of the presentinvention comprises any of the above semiconductor devices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view illustrating a method of manufacturing an interconnectsubstrate according to a first embodiment to which the present inventionis applied.

FIGS. 2A and 2B are views illustrating a method of manufacturing aninterconnect substrate according to the first embodiment to which thepresent invention is applied.

FIGS. 3A and 3B are views illustrating a method of manufacturing aninterconnect substrate according to the first embodiment to which thepresent invention is applied.

FIG. 4 is a view illustrating a method of manufacturing an interconnectsubstrate according to the first embodiment to which the presentinvention is applied.

FIG. 5 is a view illustrating a method of manufacturing an interconnectsubstrate according to the first embodiment to which the presentinvention is applied.

FIG. 6 is a view illustrating a method of manufacturing an interconnectsubstrate according to the first embodiment to which the presentinvention is applied.

FIG. 7 is a view illustrating a method of manufacturing an interconnectsubstrate according to the first embodiment to which the presentinvention is applied.

FIG. 8 is a view illustrating a method of manufacturing an interconnectsubstrate according to the first embodiment to which the presentinvention is applied.

FIGS. 9A and 9B are views illustrating a method of manufacturing aninterconnect substrate according to the first embodiment to which thepresent invention is applied.

FIGS. 10A and 10B are views illustrating a method of manufacturing aninterconnect substrate according to the first embodiment to which thepresent invention is applied.

FIG. 11 is a view illustrating a method of manufacturing a semiconductordevice according to the first embodiment to which the present inventionis applied.

FIG. 12 is a view illustrating a method of manufacturing a semiconductordevice according to the first embodiment to which the present inventionis applied.

FIG. 13 is a view illustrating an interconnect substrate according to asecond embodiment to which the present invention is applied.

FIG. 14 is a view illustrating a semiconductor device according to thesecond embodiment to which the present invention is applied.

FIGS. 15A and 15B are views illustrating a method of manufacturing aninterconnect substrate according to the second embodiment to which thepresent invention is applied.

FIGS. 16A and 16B are views illustrating a method of manufacturing aninterconnect substrate according to the second embodiment to which thepresent invention is applied.

FIGS. 17A and 17B are views illustrating a method of manufacturing aninterconnect substrate according to the second embodiment to which thepresent invention is applied.

FIGS. 18A and 18B are views illustrating a method of manufacturing aninterconnect substrate according to the second embodiment to which thepresent invention is applied.

FIG. 19 is a view illustrating a method of manufacturing an interconnectsubstrate according to the second embodiment to which the presentinvention is applied.

FIG. 20 is a view illustrating a method of manufacturing an interconnectsubstrate according to the second embodiment to which the presentinvention is applied.

FIGS. 21A to 21C are views illustrating a method of manufacturing asemiconductor device according to a third embodiment to which thepresent invention is applied.

FIGS. 22A to 22C are views illustrating a method of manufacturing asemiconductor device according to a fourth embodiment to which thepresent invention is applied.

FIG. 23 is a view illustrating an interconnect substrate according to afifth embodiment to which the present invention is applied.

FIG. 24 is a view illustrating a semiconductor device according to thefifth embodiment to which the present invention is applied.

FIGS. 25A and 25B are views illustrating a method of manufacturing aninterconnect substrate according to a sixth embodiment to which thepresent invention is applied.

FIGS. 26A to 26C are views illustrating a method of manufacturing asemiconductor device according to a seventh embodiment to which thepresent invention is applied.

FIGS. 27A and 27B are views illustrating a method of manufacturing anelectronic component according to an eighth embodiment to which thepresent invention is applied.

FIG. 28 is a view showing a circuit board on which a semiconductordevice according to an embodiment to which the present invention isapplied is mounted.

FIG. 29 is a view showing electronic equipment including a semiconductordevice according to an embodiment to which the present invention isapplied.

FIG. 30 is a view showing another piece of electronic equipmentincluding a semiconductor device according to an embodiment to which thepresent invention is applied.

DETAILED DESCRIPTION OF EMBODIMENTS

An objective of embodiments of the present invention is to achievereduction of cost, an increase in density of an interconnect structure,an increase in reliability, and an increase in the degrees of freedom ofmanufacture for an interconnect substrate, a semiconductor device,methods of manufacturing the same, a circuit board, and electronicequipment.

(1) A method of manufacturing an interconnect substrate according to oneembodiment of the present invention comprises:

forming a first conductive layer;

forming an insulating layer so that at least a part of the insulatinglayer is disposed on the first conductive layer; and

forming a second conductive layer so that at least a part of the secondconductive layer is disposed on the insulating layer over the firstconductive layer,

wherein each of the first and second conductive layers is formed bydischarging drops of a solvent containing fine particles of a conductivematerial, and wherein the insulating layer is formed by dischargingdrops of a solvent containing fine particles of an insulating material.

According to this method of manufacturing an interconnect substrate,since the first and second conductive layers and the insulating layerare formed by discharging drops, an increase in density of theinterconnect structure can be achieved at low cost, whereby reliabilityand the degrees of freedom of manufacture can be increased.

(2) In this method of manufacturing an interconnect substrate, thesecond conductive layer may be formed so that a part of the secondconductive layer is electrically connected with a part of the firstconductive layer.

(3) In this method of manufacturing an interconnect substrate, theinsulating layer may be formed on the first conductive layer and in aregion adjacent to the first conductive layer.

(4) In this method of manufacturing an interconnect substrate, theinsulating layer may be formed of a plurality of layers,

-   -   a lower layer of the insulating layer may be formed in a region        adjacent to a region in which the first conductive layer is        formed, and    -   an upper layer of the insulating layer may be formed on the        first conductive layer and the lower layer of the insulating        layer.

(5) In this method of manufacturing an interconnect substrate, the lowerlayer of the insulating layer may be formed after forming the firstconductive layer.

(6) In this method of manufacturing an interconnect substrate, the firstconductive layer may be formed after forming the lower layer of theinsulating layer.

(7) This method of manufacturing an interconnect substrate may furthercomprise forming one or more posts on the first conductive layer bydischarging drops of a solvent containing fine particles of a conductivematerial,

-   -   wherein the insulating layer may be formed to avoid a region in        which the posts are formed.

(8) In this method of manufacturing an interconnect substrate, theinsulating layer may be formed so that a height of an upper surface ofthe insulating layer is substantially equal to a height of an uppersurface of at least one of the posts.

(9) In this method of manufacturing an interconnect substrate, thesecond conductive layer may be formed to pass over at least one of theposts.

(10) In this method of manufacturing an interconnect substrate, thesecond conductive layer may be formed to avoid at least one of theposts.

(11) This method of manufacturing an interconnect substrate may furthercomprise:

-   -   forming a second insulating layer so that at least a part of the        second insulating layer is disposed on the second conductive        layer; and    -   forming a third conductive layer so that at least a part of the        third conductive layer is disposed on the second insulating        layer over the second conductive layer;    -   wherein the third conductive layer may be formed by discharging        drops of a solvent containing fine particles of a conductive        material; and    -   wherein the second insulating layer may be formed by discharging        drops of a solvent containing fine particles of an insulating        material.

(12) In this method of manufacturing an interconnect substrate,

-   -   the second insulating layer may be formed to avoid a region in        which at least one of the posts is formed, and    -   the third conductive layer may be formed to pass over at least        one of the posts.

(13) In this method of manufacturing an interconnect substrate, at leastone of the posts may be formed by a plurality of steps.

(14) This method of manufacturing an interconnect substrate may furthercomprise forming one or more electronic components,

-   -   wherein each of a plurality of components forming one of the        electronic components may be formed by discharging drops of a        solvent containing fine particles of a material.

(15) In this method of manufacturing an interconnect substrate, each ofthe electronic components may be one of a capacitor, a resistor, adiode, and a transistor.

(16) In this method of manufacturing an interconnect substrate, at leastone of the electronic components may be formed on a surface on which thefirst conductive layer is formed.

(17) In this method of manufacturing an interconnect substrate, at leastone of the electronic components may be formed on the insulating layer.

(18) In this method of manufacturing an interconnect substrate, at leastone of the electronic components may be formed on the second insulatinglayer.

(19) In this method of manufacturing an interconnect substrate, thefirst conductive layer may be formed on a substrate.

(20) In this method of manufacturing an interconnect substrate,

-   -   the substrate may include a depression section, and    -   the first conductive layer may be formed to pass through the        depression section.

(21) In this method of manufacturing an interconnect substrate, at leasta top surface of the substrate may be formed of an insulating material.

(22) In this method of manufacturing an interconnect substrate,

-   -   the substrate may include an insulating section and a conductive        section which is formed through the insulating section, and    -   the first conductive layer may be formed over the insulating        section and the conductive section so that the first conductive        layer is electrically connected with the conductive section.

(23) This method of manufacturing an interconnect substrate may furthercomprise removing the substrate from the first conductive layer.

(24) A method of manufacturing a semiconductor device according toanother embodiment of the present invention comprises:

-   -   manufacturing an interconnect substrate; and    -   mounting a semiconductor chip on the interconnect substrate,    -   the manufacturing of an interconnect substrate including:    -   forming a first conductive layer;    -   forming an insulating layer so that at least a part of the        insulating layer is disposed on the first conductive layer; and    -   forming a second conductive layer so that at least a part of the        second conductive layer is disposed on the insulating layer over        the first conductive layer,    -   wherein each of the first and second conductive layers is formed        by discharging drops of a solvent containing fine particles of a        conductive material, and    -   wherein the insulating layer is formed by discharging drops of a        solvent containing fine particles of an insulating material.

According to this method of manufacturing a semiconductor device, sincethe first and second conductive layers and the insulating layer areformed by discharging drops, an increase in density of the interconnectstructure can be achieved at low cost, whereby reliability and thedegrees of freedom of manufacture can be increased.

(25) In this method of manufacturing a semiconductor device,

-   -   the interconnect substrate may be manufactured with a part of        the first conductive layer being exposed, and    -   the exposed part of the first conductive layer may be        electrically connected with the semiconductor chip.

(26) In this method of manufacturing a semiconductor device, aconductive layer other than the first and second conductive layers maybe electrically connected with the semiconductor chip.

(27) In this method of manufacturing a semiconductor device, the firstconductive layer may be formed over a substrate.

(28) In this method of manufacturing a semiconductor device,

-   -   the substrate may include a depression section,    -   the first conductive layer may be formed to pass through the        depression section, and    -   the semiconductor chip may be mounted in the depression section.

(29) In this method of manufacturing a semiconductor device,

-   -   the substrate may include an insulating section and a conductive        section which is formed through the insulating section, and    -   the first conductive layer may be formed over the insulating        section and the conductive section so that the first conductive        layer is electrically connected with the conductive section.

(30) This method of manufacturing a semiconductor device may furthercomprise removing the substrate from the first conductive layer.

(31) A method of manufacturing a semiconductor device according to afurther embodiment of the present invention comprises:

-   -   mounting a semiconductor chip over a substrate with a surface of        the semiconductor chip on which an electrode is formed facing        upward;    -   forming a first conductive layer over the substrate and the        semiconductor chip so that the first conductive layer is        electrically connected with the electrode of the semiconductor        chip;    -   forming an insulating layer so that at least a part of the        insulating layer is disposed on the first conductive layer; and    -   forming a second conductive layer so that at least a part of the        second conductive layer is disposed on the insulating layer over        the first conductive layer,    -   wherein each of the first and second conductive layers is formed        by discharging drops of a solvent containing fine particles of a        conductive material, and    -   wherein the insulating layer is formed by discharging drops of a        solvent containing fine particles of an insulating material.

According to this method of manufacturing a semiconductor device, sincethe first and second conductive layers and the insulating layer areformed by discharging drops, an increase in density of the interconnectstructure can be achieved at low cost, whereby reliability and thedegrees of freedom of manufacture can be increased.

(32) In this method of manufacturing a semiconductor device,

-   -   the substrate may include a depression section, and    -   the semiconductor chip may be mounted in the depression section.

(33) This method of manufacturing a semiconductor device may furthercomprise forming a resin layer by filling the depression section inwhich the semiconductor chip is mounted with a resin,

-   -   wherein the first conductive layer may be formed to pass over        the resin layer.

(34) A method of manufacturing a semiconductor device according to stillanother embodiment of the present invention comprises:

-   -   mounting a semiconductor chip over a first substrate with a        surface of the semiconductor chip on which an electrode is        formed facing upward;    -   attaching a second substrate to the first substrate, the second        substrate having a shape which avoids the semiconductor chip;    -   forming a first conductive layer over the second substrate and        the semiconductor chip so that the first conductive layer is        electrically connected with the electrode of the semiconductor        chip;    -   forming an insulating layer so that at least a part of the        insulating layer is disposed on the first conductive layer; and    -   forming a second conductive layer so that at least a part of the        second conductive layer is disposed on the insulating layer over        the first conductive layer,    -   wherein each of the first and second conductive layers is formed        by discharging drops of a solvent containing fine particles of a        conductive material, and    -   wherein the insulating layer is formed by discharging drops of a        solvent containing fine particles of an insulating material.

According to this method of manufacturing a semiconductor device, sincethe first and second conductive layers and the insulating layer areformed by discharging drops, an increase in density of the interconnectstructure can be achieved at low cost, whereby reliability and thedegrees of freedom of manufacture can be increased.

(35) In this method of manufacturing a semiconductor device, the secondsubstrate may have a coefficient of thermal expansion closer to acoefficient of thermal expansion of the semiconductor chip than acoefficient of thermal expansion of the first substrate.

(36) A method of manufacturing a semiconductor device according to astill further embodiment of the present invention comprises:

-   -   forming a first conductive layer over a semiconductor wafer on        which a plurality of integrated circuits are formed so that the        first conductive layer is electrically connected with electrodes        of the semiconductor wafer;    -   forming an insulating layer so that at least a part of the        insulating layer is disposed on the first conductive layer;    -   forming a second conductive layer so that at least a part of the        second conductive layer is disposed on the insulating layer over        the first conductive layer; and    -   cutting the semiconductor wafer,    -   wherein each of the first and second conductive layers is formed        by discharging drops of a solvent containing fine particles of a        conductive material, and    -   wherein the insulating layer is formed by discharging drops of a        solvent containing fine particles of an insulating material.

According to this method of manufacturing a semiconductor device, sincethe first and second conductive layers and the insulating layer areformed by discharging drops, an increase in density of the interconnectstructure can be achieved at low cost, whereby reliability and thedegrees of freedom of manufacture can be increased.

(37) In this method of manufacturing a semiconductor device, the secondconductive layer may be formed so that a part of the second conductivelayer is electrically connected with a part of the first conductivelayer.

(38) In this method of manufacturing a semiconductor device, theinsulating layer may be formed on the first conductive layer and in aregion adjacent to the first conductive layer.

(39) In this method of manufacturing a semiconductor device, theinsulating layer may be formed of a plurality of layers, a lower layerof the insulating layer may be formed in a region adjacent to a regionin which the first conductive layer is formed, and an upper layer of theinsulating layer may be formed on the first conductive layer and thelower layer of the insulating layer.

(40) In this method of manufacturing a semiconductor device, the lowerlayer of the insulating layer may be formed after forming the firstconductive layer.

(41) In this method of manufacturing a semiconductor device, the firstconductive layer may be formed after forming the lower layer of theinsulating layer.

(42) This method of manufacturing a semiconductor device may furthercomprise forming one or more posts on the first conductive layer bydischarging drops of a solvent containing fine particles of a conductivematerial,

-   -   wherein the insulating layer may be formed to avoid a region in        which the posts are formed.

(43) In this method of manufacturing a semiconductor device, theinsulating layer may be formed so that a height of an upper surface ofthe insulating layer is substantially equal to a height of an uppersurface of at least one of the posts.

(44) In this method of manufacturing a semiconductor device, the secondconductive layer may be formed to pass over at least one of the posts.

(45) In this method of manufacturing a semiconductor device, the secondconductive layer may be formed to avoid at least one of the posts.

(46) This method of manufacturing a semiconductor device may furthercomprise:

-   -   forming a second insulating layer so that at least a part of the        second insulating layer is disposed on the second conductive        layer; and    -   forming a third conductive layer so that at least a part of the        third conductive layer is disposed on the second insulating        layer over the second conductive layer,    -   wherein the third conductive layer may be formed by discharging        drops of a solvent containing fine particles of a conductive        material, and    -   wherein the second insulating layer may be formed by discharging        drops of a solvent containing fine particles of an insulating        material.

(47) In this method of manufacturing a semiconductor device,

-   -   the second insulating layer may be formed to avoid a region in        which at least one of the posts is formed, and    -   the third conductive layer may be formed to pass over at least        one of the posts.

(48) In this method of manufacturing a semiconductor device, at leastone of the posts may be formed by a plurality of steps.

(49) This method of manufacturing a semiconductor device may furthercomprise forming one or more electronic components,

-   -   wherein each of a plurality of components forming one of the        electronic components may be formed by discharging drops of a        solvent containing fine particles of a material.

(50) In this method of manufacturing a semiconductor device, each of theelectronic components may be one of a capacitor, a resistor, a diode,and a transistor.

(51) In this method of manufacturing a semiconductor device, at leastone of the electronic components may be formed on a surface on which thefirst conductive layer is formed.

(52) In this method of manufacturing a semiconductor device, at leastone of the electronic components may be formed on the insulating layer.

(53) In this method of manufacturing a semiconductor device, at leastone of the electronic components may be formed on the second insulatinglayer.

(54) An interconnect substrate according to yet another embodiment ofthe present invention is manufactured by any of the above methods.

(55) A semiconductor device according to a yet further embodiment of thepresent invention is manufactured by any of the above methods.

(56) A semiconductor device according to a yet further embodiment of thepresent invention comprises:

-   -   a substrate including a depression section;    -   a first conductive layer formed to pass through the depression        section;    -   an insulating layer, at least a part of the insulating layer        being disposed on the first conductive layer;    -   a second conductive layer, at least a part of the second        conductive layer being disposed on the insulating layer over the        first conductive layer; and    -   a semiconductor chip mounted in the depression section.

(57) In this semiconductor device, the semiconductor chip may beelectrically connected with the first conductive layer.

(58) In this semiconductor device, the semiconductor chip may beelectrically connected with a conductive layer other than the first andsecond conductive layers.

(59) A semiconductor device according to a yet further embodiment of thepresent invention comprises:

-   -   a substrate including a depression section;    -   a semiconductor chip mounted in the depression section of the        substrate with a surface of the semiconductor chip on which an        electrode is formed facing upward;    -   a first conductive layer formed over the substrate and the        semiconductor chip so that the first conductive layer is        electrically connected with the electrode of the semiconductor        chip;    -   an insulating layer, at least a part of the insulating layer        being disposed on the first conductive layer; and    -   a second conductive layer, at least a part of the second        conductive layer being disposed on the insulating layer over the        first conductive layer.

(60) This semiconductor device may further comprise a resin layer formedin the depression section in which the semiconductor chip is mounted,wherein the first conductive layer may be formed to pass over the resinlayer.

(61) A semiconductor device according to a yet further embodiment of thepresent invention comprises:

-   -   a first substrate;    -   a semiconductor chip mounted over the first substrate with a        surface of the semiconductor chip on which an electrode is        formed facing upward;    -   a second substrate having a shape which avoids the semiconductor        chip and being attached to the first substrate;    -   a first conductive layer which is formed over the second        substrate and the semiconductor chip so that the first        conductive layer is electrically connected with the electrode of        the semiconductor chip;    -   an insulating layer, at least a part of the insulating layer        being disposed on the first conductive layer; and    -   a second conductive layer, at least a part of the second        conductive layer being disposed on the insulating layer over the        first conductive layer.

(62) In this semiconductor device, the second substrate may have acoefficient of thermal expansion closer to a coefficient of thermalexpansion of the semiconductor chip than that of the first substrate.

(63) A circuit board according to a yet further embodiment of thepresent invention is equipped with any of the above semiconductordevices.

(64) Electronic equipment according to a yet further embodiment of thepresent invention comprises the any of above semiconductor devices.

The embodiments of the present invention are described below withreference to the drawings.

First Embodiment

FIGS. 1 to 10B are views illustrating a method of manufacturing aninterconnect substrate according to a first embodiment of the presentinvention. In the present embodiment, a substrate 10 is provided asshown in FIG. 1. The shape of the substrate 10 is not limited to that ofa plate (rectangular plate, for example) insofar as the substrate 10 cansupport a product placed or formed on the substrate 10. The substrate 10may be formed of an insulating material (resin such as a polyimide orglass, for example), a conductor (metal such as copper, for example), ora semiconductor. The substrate 10 may be a radiator (heat sink, forexample) formed of a heat radiating material such as a metal. In thecase where the substrate 10 is formed of a conductor, at least thesurface of the substrate 10 may be formed of an insulating film 12. Theinsulating film 12 may be formed by applying a resin such as a polyimideand sintering the resin at about 200-600° C. for about 1 to 5 hours.

A depression section 14 may be formed in the substrate 10. There are nospecific limitations to the shapes of the opening and the bottom of thedepression section 14. The shapes of the opening and the bottom of thedepression section 14 may be rectangular. The inner wall surface of thedepression section 14 may be inclined with respect to the upper side(surface surrounding the depression section 14) of the substrate 10 orthe bottom of the depression section 14. Specifically, the inner wallsurface of the depression section 14 may be a tapered surface. Aconnection section 16 which connects the inner wall surface of thedepression section 14 with the upper side (surface surrounding thedepression section 14) of the substrate 10 may be a curved surface(protruding surface). A connection section 18 which connects the innerwall surface of the depression section 14 with the bottom of thedepression section 14 may be a curved surface (depressed surface). Ifthe connection sections 16 and 18 have such shapes, occurrence ofbreakage of a first conductive layer 20 which passes over the connectionsections 16 and 18 is reduced. The depression section 14 may be formedto have a depth of about 0.5 to several millimeters by etching, cutting,or stamping. The insulating film 12 may be formed on either the entiresurface of the depression section 14 (inner wall surface and bottom ofthe depression section 14), or formed only on a part of the depressionsection 14 (region in which the first conductive layer 20 is formed).The insulating film 12 may be formed on the entire area of the upperside of the substrate 10 (surface surrounding the depression section14), or formed only on a part of the upper side of the substrate 10(region in which the first conductive layer 20 is formed).

As shown in FIGS. 2A and 2B, the first conductive layer (interconnectpattern including a plurality of lines, for example) 20 is formed. Thefirst conductive layer 20 is formed on the substrate 10. The firstconductive layer 20 may be formed to pass through the depression section14. The first conductive layer 20 is formed by discharging drops of asolvent containing fine particles of a conductive material (metal suchas gold, silver, or copper, for example). An ink-jet method or a BubbleJet (registered trademark) method may be used. As a solvent containingfine particles of gold, “Perfect Gold” (manufactured by VacuumMetallurgical Co., Ltd.) may be used. As a solvent containing fineparticles of silver, “Perfect Silver” (manufactured by VacuumMetallurgical Co., Ltd.) may be used. There are no specific limitationsto the size of the fine particles. The fine particles used herein referto particles which can be discharged together with a solvent. The firstconductive layer 20 may be formed by sintering the discharged solventcontaining fine particles of a conductive material at about 200 to 600°C. for about 1 to 5 hours.

An insulating layer 26 (see FIG. 3B) is formed. The insulating layer 26is formed by discharging drops of a solvent containing fine particles ofan insulating material (resin such as a polyimide, for example). Forexample, an ink-jet method or a Bubble Jet (registered trademark) methodmay be used. The insulating layer 26 may be formed by a plurality oflayers (lower layer 22 and upper layer 24, for example). In this case, asolvent containing fine particles of an insulating material may bedischarged a plurality of times. The insulating layer 26 may be formedby sintering a discharged solvent containing fine particles of aninsulating material at about 200 to 600° C. for about 1 to 5 hours. Thesintering may be performed each time the lower layer 22 and the upperlayer 24 are formed.

As shown in FIGS. 2A and 2B, the lower layer 22 may be formed in aregion adjacent to a region in which the first conductive layer 20 isformed. The lower layer 22 may be formed after forming the firstconductive layer 20. In this case, the lower layer 22 may be formed toavoid the upper side of the first conductive layer 20. The lower layer22 may be formed to avoid the region in which the first conductive layer20 is formed, and the first conductive layer 20 may be formed in theregion in which the lower layer 22 is not formed. The lower layer 22 maybe formed so that the upper side of the lower layer 22 has a heightequal to the height of the upper side of the first conductive layer 20.The lower layer 22 may be formed so that the height of the upper side ofthe lower layer 22 differs from the height of the upper side of thefirst conductive layer 20.

As shown in FIGS. 3A and 3B, the upper layer 24 may be formed on thefirst conductive layer 20 and the lower layer 22. The upper layer 24 maybe formed after forming the first conductive layer 20 and the lowerlayer 22. The lower layer 22 may be formed first, and a part of theupper layer 24 may be formed on the lower layer 22 so as to avoid thefirst conductive layer 20. Then, the first conductive layer 20 may beformed, and the remaining portion of the upper layer 24 may be formed onthe first conductive layer 20.

The insulating layer 26 is formed in this manner so that at least a part(upper layer 24, for example) of the insulating layer 26 is disposed onthe first conductive layer 20. The insulating layer 26 may be formed toavoid a part of the first conductive layer 20. The insulating layer 26may be formed on the first conductive layer 20 and in the regionadjacent to the first conductive layer 20. The insulating layer 26 maycover the surface of the first conductive layer 20 (surface excludingthe contact area between the first conductive layer 20 and the substrate10, an area in which a post 30 is formed, and an electrical connectionsection with a semiconductor chip 80 (see FIG. 11), for example). Theinsulating layer 26 may be formed to avoid a region in which asemiconductor chip is mounted (at least a part of the bottom of thedepression section 14, for example).

The above description illustrates an example in which the insulatinglayer 26 is formed by a plurality of layers (a plurality of processes).However, the insulating layer 26 may be formed by a single layer (singleprocess). For example, after forming the first conductive layer 20, theinsulating layer 26 may be formed so that at least a part of theinsulating layer 26 is disposed on the first conductive layer 20.

As shown in FIGS. 3A and 3B, at least one post 30 may be formed on thefirst conductive layer 20. The post 30 is a section which electricallyconnects upper and lower conductive layers. The post 30 may be largerthan the first conductive layer 20 insofar as a part of the post 30 isplaced on the first conductive layer 20. The post 30 is formed bydischarging drops of a solvent containing fine particles of a conductivematerial. The insulating layer 26 is formed to avoid a region in whichthe post 30 is formed. The insulating layer 26 (upper layer 24, forexample) may be formed so that the height of the upper surface of theinsulating layer 26 is almost equal to the height of the upper side ofat least one post 30.

The insulating layer 26 may be formed after forming the post 30 on thefirst conductive layer 20. The post 30 may be formed on the firstconductive layer 20 after forming at least a part (lower layer 22, forexample) of the insulating layer 26.

Examples of the post 30 formed on the first conductive layer 20 aregiven below. The post 30 shown in FIG. 3A consists only of a post 31formed on the first conductive layer 20. The post 30 shown in FIG. 5consists of the post 31 formed on the first conductive layer 20 (seeFIG. 3A), a post 32 formed on the post 31 (see FIG. 4), and a post 33formed on the post 32. The post 30 shown in FIG. 7 consists of the post31 formed on the first conductive layer 20 (see FIG. 3A), the post 32formed on the post 31 (see FIG. 4), the post 33 formed on the post 32(see FIG. 5), a post 34 formed on the post 33 (see FIG. 6), and a post35 formed on the post 34. The post 30 may be formed of a single layer ora plurality of layers. Each of the posts 31, 32, 33, 34, and 35 whichmakes up the post 30 may be formed by discharging drops of a solventcontaining fine particles of a conductive material. The posts 31, 32,33, 34, and 35 may be sequentially formed. Specifically, at least onepost 30 may be formed by a plurality of steps.

As shown in FIG. 4, a second conductive layer (interconnect patternincluding a plurality of lines, for example) 40 is formed. The secondconductive layer 40 is formed so that a part of the second conductivelayer 40 is disposed on the insulating layer 26 over the firstconductive layer 20. The details of the first conductive layer 20 areapplied to the second conductive layer 40. The second conductive layer40 may be formed so that a part of the second conductive layer 40 iselectrically connected with a part of the first conductive layer 20. Forexample, the second conductive layer 40 may be formed to pass over atleast one post 30 (post 30 consisting only of the post 31, for example).This allows a part of the first conductive layer 20 to be electricallyconnected with a part of the second conductive layer 40 through the post30. The first and second conductive layers 20 and 40 are electricallyinsulated from each other by the insulating layer 26 in the area otherthan the post 30. The second conductive layer 40 may be formed to avoidat least one post 31 (post 31 on which the post 32 is formed (see FIG.3A) in more detail).

According to the present embodiment, since the first and secondconductive layers 20 and 40 and the insulating layer 26 are formed bydischarging drops, an increase in density of the interconnect structurecan be achieved at low cost, whereby reliability and the degrees offreedom of manufacture can be increased.

As shown in FIG. 5, a second insulating layer 46 may be formed so thatat least a part of the second insulating layer 46 is disposed on thesecond conductive layer 40. The second insulating layer 46 may be formedto avoid a part of the second conductive layer 40. The details of theinsulating layer (first insulating layer) 26 are applied to the secondinsulating layer 46. For example, the second insulating layer 46 may beformed by a lower layer 42 shown in FIG. 4 and an upper layer 44 shownin FIG. 5. The details of the lower layer 22 and the upper layer 24 areapplied to the lower layer 42 and the upper layer 44. The secondinsulating layer 46 may be formed to avoid a region in which thesemiconductor chip 80 (see FIG. 11) is mounted (at least a part of thebottom of the depression section 14, for example).

The post 32 may be formed on any of the posts 31 shown in FIG. 3A. Inthis case, the second insulating layer 46 is formed to avoid a region inwhich at least one post 32 is formed. As shown in FIG. 5, the post 33may be formed on the post 32. A post 50 (see FIG. 9) may be formed onthe second conductive layer 40. The post 50 may consist of a post 51shown in FIG. 5 formed on the second conductive layer 40 and posts 52 to55 shown in FIGS. 6 to 9A formed on the post 51. The details of the post30 are applied to the post 50.

As shown in FIG. 6, a third conductive layer 60 may be formed so that atleast a part of the third conductive layer 60 is disposed on the secondinsulating layer 46 over the second conductive layer 40. The details ofthe first conductive layer 20 are applied to the third conductive layer60. The third conductive layer 60 may be formed so that a part of thethird conductive layer 60 is electrically connected with a part of thefirst conductive layer 20 or the second conductive layer 40. Forexample, the third conductive layer 60 may be formed to pass over atleast one post 30 (post 30 consisting of the posts 31, 32, and 33, forexample). This allows a part of the first conductive layer 20 to beelectrically connected with a part of the third conductive layer 60through the post 30. The third conductive layer 60 may be formed to passover at least one post 51 (this example is not illustrated). This allowsa part of the second conductive layer 40 to be electrically connectedwith a part of the third conductive layer 60 through the post 51. Thefirst and second conductive layers 20 and 40 are electrically insulatedfrom the third conductive section 60 by the second insulating layer 46in the area other than the posts 30 and 51. The third conductive layer60 may be formed to avoid at least one post 34 and at least one post 52.

As shown in FIGS. 7 and 8, a conductive layer and an insulating layerare optionally stacked by repeating the above steps. As shown in FIGS.9A and 9B, an insulating layer 72 may be formed so that the upper sidesof the posts 50 and 70 are exposed. The post 50 is formed on the secondconductive layer 40 and the post 70 is formed on the conductive layerother than the second conductive layer 40 or the post (details areomitted). The posts 50 and 70 may be formed at positions at whichexternal terminals are formed. The number and arrangement of the posts50 and 70 are not limited to those shown in FIG. 9A. The posts 50 and 70may be arranged in the shape of a matrix (in a plurality of rows andcolumns) or in the shape of an area array.

As shown in FIGS. 10A and 10B, lands 74 larger than the upper sides ofthe posts 50 and 70 may be formed on the posts 50 and 70. The lands 74are electrically connected with one of the conductive layers (firstconductive layer 20, for example) through the posts 50 and 70. At leastone land 74 is electrically connected with the conductive layer which iselectrically connected with the semiconductor chip (first conductivelayer 20, for example). An insulating layer 76 may be formed so that atleast a part of the lands 74 is exposed. The details of the firstconductive layer 20 may be applied to the lands 74. The details of theinsulating layer 26 may be applied to the insulating layer 76.

An interconnect substrate is manufactured in this manner. Theinterconnect substrate has a configuration derived from the abovedescription. As shown in FIGS. 10A and 10B, a part of the firstconductive layer 20 may be exposed. For example, a part of the firstconductive layer 20 may be exposed inside the depression section 14 ofthe substrate 10. The exposed part of the first conductive layer 20 maybe used for electrical connection with the semiconductor chip 80.

FIGS. 11 and 12 are views illustrating a method of manufacturing asemiconductor device. In the present embodiment, the semiconductor chip80 is mounted on the above described interconnect substrate. Thesemiconductor chip 80 has a peripheral type pad arrangement in whichpads are arranged on the periphery of the semiconductor chip 80. Theexposed part of the first conductive layer 20 may be electricallyconnected with the semiconductor chip 80. The conductive layer otherthan the first conductive layer 20 (second conductive layer 40 or theconductive layer other than the first and second conductive layers 20and 40, for example) may be electrically connected with thesemiconductor chip 80. The semiconductor chip 80 may be mounted byapplying face-down bonding as shown in FIG. 11, or applying face-upbonding in which the semiconductor chip 80 is electrically connectedwith the conductive layer through wires. The semiconductor chip 80 maybe mounted in the depression section 14 of the substrate 10.

As shown in FIG. 12, the depression section 14 in which thesemiconductor chip 80 is mounted may be filled with a resin 84 such asan epoxy resin. A filler metal 82 such as solder (soft solder or hardsolder) may be provided to the land 74. The filler metal may be a solderball or solder paste.

A semiconductor device according to the present embodiment includes thesubstrate 10 in which the depression section 14 is formed. The firstconductive layer 20 is formed to pass through the depression section 14.At least a part of the insulating layer 26 is disposed on the firstconductive layer 20. At least a part of the second conductive layer 40is disposed on the insulating layer 26 over the first conductive layer20. The semiconductor chip 80 is mounted in the depression section 14.The semiconductor chip 80 may be electrically connected with the firstconductive layer 20. The semiconductor chip 80 may be electricallyconnected with the conductive layer other than the first and secondconductive layers 20 and 40.

According to the present embodiment, since the first and secondconductive layers and the insulating layers are formed by dischargingdrops, an increase in density of the interconnect structure can beachieved at low cost, whereby reliability and the degrees of freedom ofmanufacture can be increased.

Second Embodiment

FIG. 13 is a plan view illustrating an interconnect substrate accordingto a second embodiment of the present invention. FIG. 14 is across-sectional view illustrating a semiconductor device using theinterconnect substrate shown in FIG. 13. In the present embodiment, thesubstrate 10 described in the first embodiment is used. The depressionsection 14 is formed in the substrate 10. The insulating film 12 isformed on the substrate 10.

The interconnect substrate shown in FIG. 13 includes a plurality oflands 100. The lands 100 are formed in the uppermost layer of theinterconnect substrate. The lands 100 may be disposed at the center(inside the depression section 14, for example) of the interconnectsubstrate. The lands 100 are arranged in the shape of an area array (ina plurality of rows and columns (three or more rows and three or morecolumns, for example) in the shape of a matrix, for example). The lands100 are bonded to a semiconductor chip 102. The interconnect substratemay include lands 104 on which external terminals are formed in additionto the lands 100 bonded to the semiconductor chip 102.

As shown in FIG. 14, the semiconductor device includes the semiconductorchip 102. The semiconductor chip 102 has an area array type padarrangement. The semiconductor chip 102 may be bonded face down to theinterconnect substrate. Bumps may be formed on pads of the semiconductorchip 102. The pads of the semiconductor chip 102 are electricallyconnected with the lands 100.

The depression section 14 is formed in the substrate 10, and the lands100 are formed over the bottom of the depression section 14. Therefore,the region in which the lands 100 are formed (center of the interconnectsubstrate, for example) is lower than the other region (end of theinterconnect substrate, for example). The upper side (side opposite tothe side on which the pads are formed) of the semiconductor chip 102mounted on the interconnect substrate may be lower than the surface ofthe uppermost layer (land 104, for example) of the interconnectsubstrate outside the depression section 14. The semiconductor chip 102may be covered with a resin 106. For example, the resin 106 may beprovided to a depression which is formed corresponding to the depressionsection 14.

A filler metal 108 such as a solder (soft solder or hard solder) may beprovided to the lands 104. The filler metal may be a solder ball orsolder paste. At least one land 104 is electrically connected with atleast one land 100.

FIGS. 15A to 20 are views illustrating a method of manufacturing theinterconnect substrate according to the second embodiment of the presentinvention. In the present embodiment, a first conductive layer 120 isformed as shown in FIGS. 15A and 15B. The first conductive layer 120 maybe formed on the insulating film 12. The first conductive layer 120 maybe the lowermost conductive layer among the conductive layers used forelectrical connection. The first conductive layer 120 may be made up ofa plurality of lines. A part (end, for example) of the line may bedisposed to overlap a position at which one of the lands 100 (see FIG.13) is formed. In more detail, a land 112 (see FIG. 13) among theplurality of lands 100 located on the inner side overlaps a part (part121 of the line, for example) of the first conductive layer 120. Thedetails (material, formation method, and the like) of the firstconductive layer 20 described in the first embodiment are applied to thefirst conductive layer 120.

As shown in FIGS. 16A and 16B, an insulating layer 126 and a post 131are formed. The details (material, formation method, and the like) ofthe insulating layer 26 and the post 31 described in the firstembodiment are applied to the insulating layer 126 and the post 131. Apost 141 is formed on a part (part 121 of the line shown in FIG. 15A,for example) of the first conductive layer 120. The post 141 is formedat a position corresponding to the pad of the semiconductor chip 102(position at which the land 100 is formed). The post 141 may be formedonly at a position corresponding to the land 112 (see FIG. 13) among theplurality of lands 100 located on the inner side. The details (material,formation method, and the like) of the post 141 may be the same as thedetails of the post 131.

As shown in FIGS. 17A and 17B, a second conductive layer 150 is formed.The second conductive layer 150 is formed on the insulating layer 126.The details (material, formation method, and the like) of the secondconductive layer 40 described in the first embodiment are applied to thesecond conductive layer 150. A part (end, for example) 151 of one of theplurality of lines which make up the second conductive layer 150 may bedisposed at a position corresponding to the land 100. The part 151 ofthe line is disposed at a position corresponding to the land 114 (seeFIG. 13) located on the outer side of the part 121 (see FIG. 15A) of theline formed in advance.

Posts 132 and 142 are respectively formed on the posts 131 and 141. Thedetails (material, formation method, and the like) of the posts 132 and142 may be the same as the details of the posts 131 and 141. The secondconductive layer 150 may be formed to pass over at least one of theposts 141 and 131 (not shown in FIGS. 17A and 17B).

As shown in FIGS. 18A and 18B, a second insulating layer 156 is formed.A post 133 may be formed on the post 132. The stacked posts 131, 132,and 133 may be referred to as one post 130 in the case where a post isnot formed on the post 133. A post 160 may be formed on the secondconductive layer 150. A post 143 may be formed on the post 142. A post171 may be formed on the second conductive layer 150 (end 151 of theline, for example). The details (material, formation method, and thelike) of the second insulating layer 156 may be the same as the detailsof the second insulating layer 46 described in the first embodiment. Thedetails (material, formation method, and the like) of the posts 133,160, 143, and 171 may be the same as the details of the post 131.

As shown in FIG. 19, a third conductive layer 180 may be formed. Thethird conductive layer 180 is formed on the second insulating layer 156.The third conductive layer 180 may be formed to pass over the post 130.The details (material, formation method, and the like) of the secondconductive layer 40 described in the first embodiment are applied to thethird conductive layer 180. Posts 144 and 172 are respectively formed onthe posts 143 and 171. The details (material, formation method, and thelike) of the posts 144 and 172 may be the same as the details of thepost 141.

As shown in FIG. 20, a third insulating layer 186 may be formed. A post135 may be formed on the post 134. The stacked posts 131 to 135 may bereferred to as one post 130 in the case where a post is not formed onthe post 135. A post 190 may be formed on the third conductive layer180. Posts 145 and 173 may be respectively formed on the posts 144 and172. The stacked posts 141 to 145 (or posts 171 to 173) may be referredto as one post 140 (or post 170) in the case where a post is not formedon the post 145 (or post 173). The details (material, formation method,and the like) of the third insulating layer 186 may be the same as thedetails of the second insulating layer 46 described in the firstembodiment. The details (material, formation method, and the like) ofthe posts 135, 190, 145, and 173 may be the same as the details of thepost 131.

As shown in FIG. 13, the lands 104 may be formed on the posts 130 and190. The surfaces of the posts 140 and 170 may be the lands 112 and 114,or the lands may be formed by forming a conductive layer on the posts140 and 170.

The details described in other embodiments may be applied to the presentembodiment. The details described in the present embodiment may beapplied to other embodiments.

Third Embodiment

FIGS. 21A to 21C are views illustrating a method of manufacturing asemiconductor device according to a third embodiment of the presentinvention. In the present embodiment, a semiconductor chip 210 ismounted on a substrate 200 so that the surface of the semiconductor chip210 on which electrodes 212 are formed faces upward, as shown in FIG.21A. An insulating layer 204 may be formed on the substrate 200. Thesubstrate 200 may include a depression section 202. The inner wallsurface of the depression section 202 may be formed perpendicularly tothe substrate 200 or inclined with respect to the substrate 200. Theinner wall surface of the depression section 202 may be a curved surface(protruding surface or depressed surface). The semiconductor chip 210may be mounted in the depression section 202. The substrate 200 may bebonded to the semiconductor chip 210 through an adhesive 214. Thedepression section 202 in which the semiconductor chip 210 is mountedmay be filled with a resin 216. As shown in FIG. 21B, a resin layer isformed in the depression section 202 in which the semiconductor chip 210is mounted by using the resin 216.

As shown in FIG. 21C, a first conductive layer 220 is formed over thesubstrate 200 (region surrounding the depression section 202, forexample) and the semiconductor chip 210. The first conductive layer 220is formed to be electrically connected with the electrodes 212 of thesemiconductor chip 210. For example, bumps 218 may be formed on theelectrodes 212, and the first conductive layer 220 may be formed to passover the bumps 218. The first conductive layer 220 may be formed to passover the resin layer formed by the resin 216. An insulating material(film or layer) may be interposed between the semiconductor chip 210 andthe first conductive layer 220. An insulating layer 226 is formed sothat at least a part of the insulating layer 226 is disposed on thefirst conductive layer 220. A second conductive layer 230 is formed sothat at least a part of the second conductive layer 230 is disposed onthe insulating layer 226 over the first conductive layer 220. The firstand second conductive layers 220 and 230 may be electrically connected(bonded) through posts 240.

The details (material, formation method, and the like) of the first andsecond conductive layers 20 and 40 and the insulating layer 26 describedin the first embodiment are applied to the first and second conductivelayers 220 and 230 and the insulating layer 226. The bump 218 may beformed by using the same method as the first conductive layer 220. Aninsulating layer, a conductive layer, and a post may be further stackedon the second conductive layer 230. The details are the same asdescribed in the first and second embodiments.

A semiconductor device is manufactured in this manner. The semiconductordevice has a configuration derived from the above manufacturing method.In the present embodiment, the effects described in the first embodimentcan be achieved. The details described in other embodiments may beapplied to the present embodiment. The details described in the presentembodiment may be applied to other embodiments.

Fourth Embodiment

FIGS. 22A to 22C are views illustrating a method of manufacturing asemiconductor device according to a fourth embodiment of the presentinvention. In the present embodiment, a semiconductor chip 300 ismounted on a first substrate 310 so that the surface of thesemiconductor chip 300 on which electrodes 302 are formed faces upward,as shown in FIG. 22A. The first substrate 310 may include a protrudingsection 312. In this case, the semiconductor chip 300 may be mounted onthe protruding section 312. The first substrate 310 may be bonded to thesemiconductor chip 300 through an adhesive 314. In the case where thefirst substrate 310 is a conductor, an insulating film may be formed onthe surface of the first substrate 310, or the first substrate 310 maybe electrically insulated from the semiconductor chip 300 by theadhesive 314.

A second substrate 320 having a shape so as to avoid the semiconductorchip 300 (having a hole 322, for example) is attached to the firstsubstrate 310. The protruding section 312 of the first substrate 310 maybe disposed inside the hole 322. The first and second substrates 310 and320 may be bonded through the adhesive 314. The second substrate (glassplate or ceramic substrate, for example) 320 may have a coefficient ofthermal expansion closer to the coefficient of thermal expansion of thesemiconductor chip 300 than that of the first substrate (metal plate,for example) 310. The first substrate 310 may be a heat sink.

The hole 322 may be filled with a resin 316. A resin layer may be formedby the resin 316 inside the hole 322, as shown in FIG. 22B.

As shown in FIG. 22C, the first conductive layer 220 is formed over thesecond substrate 320 and the semiconductor chip 300 so that the firstconductive layer 220 is electrically connected with the electrodes 302of the semiconductor chip 300. Since the subsequent steps are the sameas the steps described in the third embodiment, further description isomitted. A semiconductor device is manufactured in this manner. Thesemiconductor device has a configuration derived from the abovemanufacturing method. In the present embodiment, the effects describedin the first embodiment can also be achieved. The details described inother embodiments may be applied to the present embodiment. The detailsdescribed in the present embodiment may be applied to other embodiments.

Fifth Embodiment

FIG. 23 is a view illustrating an interconnect substrate according to afifth embodiment of the present invention. In the present embodiment, asubstrate 400 includes an insulating section (section formed of ceramicor a resin such as an epoxy resin or a polyimide resin, for example)402, and a conductive section (section formed of a metal, for example)404 which is formed through the insulating section 402. The surface ofthe conductive section 404 exposed from the insulating section 402 maybe in the shape of a land.

A first conductive layer 410 is formed over the insulating section 402and the conductive section 404 so that the first conductive layer 410 iselectrically connected with the conductive section 404. For example, apost 412 may be formed on the conductive section 404, and the firstconductive layer 410 may be formed to pass over the post 412. Thedetails described in the first to fourth embodiments are applied to thesubsequent steps. Specifically, insulating layers and conductive layersare stacked on the first conductive layer 410 to form a high-densityinterconnect structure.

As shown in FIG. 24, the semiconductor chip 420 is electricallyconnected with pads 430. A semiconductor device is manufactured in thismanner. If necessary, a heat sink 440 may be provided to thesemiconductor chip 420. A filler metal 450 such as a solder ball may beprovided to the conductive section 404. In the present embodiment, theeffects described in the first embodiment can also be achieved. Thedetails described in other embodiments may be applied to the presentembodiment. The details described in the present embodiment may beapplied to other embodiments.

Sixth Embodiment

FIGS. 25A and 25B are views illustrating an interconnect substrateaccording to a sixth embodiment of the present invention. In the presentembodiment, a first conductive layer 510 is formed on a substrate (metalplate, glass substrate, or resist film) 500, and insulating layers andconductive layers are stacked on the first conductive layer 510 to forma high-density interconnect structure, as shown in FIG. 25A. The detailsare the same as described in the first to fifth embodiments.

As shown in FIG. 25B, the substrate 500 is removed from the firstconductive layer 510 (from the multilayer substrate including the firstconductive layer 510 in more detail). An interconnect substrate isobtained in this manner. A semiconductor device can be manufactured bymounting a semiconductor chip on the interconnect substrate. In thepresent embodiment, the effects described in the first embodiment canalso be achieved. The details described in other embodiments may beapplied to the present embodiment. The details described in the presentembodiment may be applied to other embodiments.

Seventh Embodiment

FIGS. 26A to 26C are views illustrating a method of manufacturing asemiconductor device according to a seventh embodiment of the presentinvention. In the present embodiment, a first conductive layer 610 isformed on a semiconductor wafer 600 on which a plurality of integratedcircuits 602 are formed so that the first conductive layer 610 iselectrically connected with electrodes 604 of the integrated circuits602. Insulating layers and conductive layers are stacked on the firstconductive layer 610 to form a high-density interconnect structure, asshown in FIG. 26A. The details are the same as described in the first tosixth embodiments. A filler metal 620 such as a solder ball isoptionally provided.

The semiconductor wafer 600 is cut as shown in FIG. 26B, whereby asemiconductor device is manufactured as shown in FIG. 26C. Thesemiconductor device includes a semiconductor chip 630, a high-densityinterconnect structure which is formed by stacking insulating layers andconductive layers on the semiconductor chip 630, and the filler metal620. In the present embodiment, the effects described in the firstembodiment can also be achieved. The details described in otherembodiments may be applied to the present embodiment. The detailsdescribed in the present embodiment may be applied to other embodiments.

Eighth Embodiment

FIGS. 27A and 27B are views illustrating a method of manufacturing anelectronic component which can be applied to the embodiment of thepresent invention. An electronic component may be formed on the surfaceon which a first conductive layer is formed, an insulating layer, or asecond insulating layer.

The method of manufacturing an electronic component according to thepresent embodiment includes forming each of a plurality of parts whichmake up one electric part by discharging drops of a solvent containingfine particles of a material. As shown in FIGS. 27A and 27B, first,second, and third layers 701, 702, and 703 are formed, for example. Thefirst, second, and third layers 701, 702, and 703 may be stacked orformed to be adjacent to each other.

In the case of forming a capacitor, the first and third layers 701 and703 are formed of a conductor and the second layer 702 is formed of aninsulating material. In the case of forming the first and third layers701 and 703 by using gold, “Perfect Gold” (manufactured by VacuumMetallurgical Co., Ltd.) may be used. In the case of forming the firstand third layers 701 and 703 by using silver, “Perfect Silver”(manufactured by Vacuum Metallurgical Co., Ltd.) may be used. As aninsulating material for forming the second layer 702, SiO₂, Al₂O₃,dielectrics such as SrTiO₃, BaTiO₃, and Pb(Zr,Ti)O₃, and the like can begiven. As a solvent, PGMEA, cyclohexane, carbitol acetate, and the likecan be given. Glycerol, diethylene glycol, ethylene glycol, or the likemay optionally be added as a wetting agent or a binder. As a fluidcontaining an insulating material, a polysilazane or a metal alkoxidecontaining an insulating material may be used. In this case, aninsulating material may be formed by heating or a chemical reaction. Thewidth and length of the second layer 702 and the dielectric constant ofthe insulating material are determined depending on the capacitance ofthe capacitor to be formed. The capacitance of the capacitor isdetermined depending on the areas of the first and third layers 701 and703 which become common electrodes, the distance between the first andthird layers 701 and 703, and the dielectric constant of the secondlayer 702. In the case of increasing the thickness of the first layer701, second layer 702, or third layer 703, layers may be stacked byforming a solidified layer of a fluid and discharging the same fluidonto the solidified layer and solidifying the fluid.

At least one of the first, second, and third layers 701, 702, and 703may be a resistor. As a resistance material, a mixture of conductivepowder and insulating powder, Ni—Cr, Cr—SiO, Cr—MgF, Au—SiO₂, AuGgF,PtTa₂O₅, AuTa₂O₅Ta₂, Cr₃Si, TaSi₂, and the like can be given. As asolvent, PGMEA, cyclohexane, carbitol acetate, and the like can begiven. Glycerol, diethylene glycol, ethylene glycol, or the like mayoptionally be added as a wetting agent or a binder. As a fluidcontaining an insulating material, a polysilazane or a metal alkoxidecontaining an insulating material may be used. In this case, aninsulating material may be formed by heating or a chemical reaction. Theresistance material is determined depending on the resistance value ofthe resistor to be formed. The width, height, and length of theresistance film are determined depending on the resistance value of theresistor to be formed. This is because the resistance value of theresistor is in proportion to the length and is in inverse proportion tothe cross-sectional area.

A part of the first conductive layer 20 described in the firstembodiment and the like may be formed by using a resistance material. Adiode and a transistor may be formed. In this case, the first, second,and third layers 701, 702, and 703 are formed by discharging drops of asolvent containing fine particles of a semiconductor material.

FIG. 28 shows a circuit board 1000 on which a semiconductor device 1described in any of the above embodiments is mounted. FIGS. 29 and 30respectively show a notebook-type personal computer 2000 and a portabletelephone 3000 as examples of electronic equipment including thesemiconductor device.

The present invention is not limited to the above-described embodiments.Various modifications and variations are possible. For example, thepresent invention includes configurations essentially the same as theconfigurations described in the embodiments (for example, configurationshaving the same function, method, and results, or configurations havingthe same object and results). The present invention includesconfigurations in which any unessential part of the configurationdescribed in the embodiments is replaced. The present invention includesconfigurations having the same effects or achieving the same object asthe configurations described in the embodiments. The present inventionincludes configurations in which conventional technology is added to theconfigurations described in the embodiments.

1. A method of manufacturing a semiconductor device comprising: forminga first conductive layer over a semiconductor wafer on which a pluralityof integrated circuits are formed so that the first conductive layer iselectrically connected with electrodes of the semiconductor wafer;forming one or more posts on the first conductive layer by dischargingdrops of a solvent containing fine particles of a conductive material;forming an insulating layer so that at least a part of the insulatinglayer is disposed on the first conductive layer; forming a secondconductive layer so that at least a part of the second conductive layeris disposed on the insulating layer over the first conductive layer; andcutting the semiconductor wafer, wherein each of the first and secondconductive layers is formed by discharging drops of a solvent containingfine particles of a conductive material, wherein the insulating layer isformed by discharging drops of a solvent containing fine particles of aninsulating material, and wherein the insulating layer is formed to avoida region in which the posts are formed.
 2. The method of manufacturing asemiconductor device as defined in claim 1, wherein the secondconductive layer is formed so that a part of the second conductive layeris electrically connected with a part of the first conductive layer. 3.The method of manufacturing a semiconductor device as defined in claim1, wherein the insulating layer is formed on the first conductive layerand in a region adjacent to the first conductive layer.
 4. The method ofmanufacturing a semiconductor device as defined in claim 3, wherein theinsulating layer is formed of a plurality of layers, a lower layer ofthe insulating layer is formed in a region adjacent to a region in whichthe first conductive layer is formed, and an upper layer of theinsulating layer is formed on the first conductive layer and the lowerlayer of the insulating layer.
 5. The method of manufacturing asemiconductor device as defined in claim 4, wherein the lower layer ofthe insulating layer is formed after forming the first conductive layer.6. The method of manufacturing a semiconductor device as defined inclaim 4, wherein the first conductive layer is formed after forming thelower layer of the insulating layer.
 7. The method of manufacturing asemiconductor device as defined in claim 1, wherein the insulating layeris formed so that a height of an upper surface of the insulating layeris substantially equal to a height of an upper surface of at least oneof the posts.
 8. The method of manufacturing a semiconductor device asdefined in claim 1, wherein the second conductive layer is formed topass over at least one of the posts.
 9. The method of manufacturing asemiconductor device as defined in claim 1, wherein the secondconductive layer is formed to avoid at least one of the posts.
 10. Themethod of manufacturing a semiconductor device as defined in claim 9,further comprising: forming a second insulating layer so that at least apart of the second insulating layer is disposed on the second conductivelayer; and forming a third conductive layer so that at least a part ofthe third conductive layer is disposed on the second insulating layerover the second conductive layer, wherein the third conductive layer isformed by discharging drops of a solvent containing fine particles of aconductive material, and wherein the second insulating layer is formedby discharging drops of a solvent containing fine particles of aninsulating material.
 11. The method of manufacturing a semiconductordevice as defined in claim 10, wherein the second insulating layer isformed to avoid a region in which at least one of the posts is formed,and the third conductive layer is formed to pass over at least one ofthe posts.
 12. The method of manufacturing a semiconductor device asdefined in claim 11, wherein at least one of the posts is formed by aplurality of steps.
 13. The method of manufacturing a semiconductordevice as defined in claim 10, further comprising: forming one or moreelectronic components, wherein each of a plurality of components formingone of the electronic components is formed by discharging drops of asolvent containing fine particles of a material.
 14. The method ofmanufacturing a semiconductor device as defined in claim 13, whereineach of the electronic components is one of a capacitor, a resistor, adiode, and a transistor.
 15. The method of manufacturing a semiconductordevice as defined in claim 13, wherein at least one of the electroniccomponents is formed on a surface on which the first conductive layer isformed.
 16. The method of manufacturing a semiconductor device asdefined in claim 13, wherein at least one of the electronic componentsis formed on the insulating layer.
 17. The method of manufacturing asemiconductor device as defined in claim 13, wherein at least one of theelectronic components is formed on the second insulating layer.